Performance improvement of α-6T thin film sensors based on F16CuPc buffer layer

Abstract

A F16CuPc buffer layer is proposed to be added to improve the performance of the sensors. The change of relative responsivity of sensors with and without buffer layer was investigated. The relative responsivity of sensors with buffer layer reached 448.32 % from the off-state current of transistors under 20 ppm NO2 gas. The result was 51.45 % higher than that of the sensors without buffer layer. The sensitivity for NO2 gas reaches 2087.92 %/ppm, which is 25.80 % higher than the sensors without buffer layer. The addition of buffer layer is beneficial for the transmission of charge carriers. Therefore, it is possible to obtain highly responsive sensors, which provide a feasible solution for the study of high-performance organic thin film sensors.