Abstract
A capping layer for black phosphorus (BP) field-effect transistors (FETs) can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al2O3 capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm2v−1s−1, and a dramatic decrease of subthreshold swing from 8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance–voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al2O3/BP and BP/SiO2 interfaces with hydrogen revealed by secondary ion mass spectroscopy.
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