Abstract
The electrical and optical performances of multiple-quantum-well (MQW) light-emitting diodes (LEDs) were improved by using chlorine to treat the surface of the p-type layer. The chlorine was produced from electrolyzing diluted . The chlorine reacted with the p-type surface and induced Ga vacancies in the surface region. The specific contact resistance of was obtained for metals contact with the chlorine-treated p-type due to the creation of more hole carriers via the inducement of Ga vacancies. Compared with the untreated LEDs, the current-voltage characteristics showed that the forward voltage of the chlorine-treated MQW LEDs decreased from 3.3 to at a driving current of , and the light output power increases 1.25 times at . The reverse leakage current of the chlorine-treated MQW LEDs was also significantly decreased due to the passivation of surface states by chlorination treatment of p-type layer.
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