Abstract
Thin planar silicon sensors with a pitch of 55µm, active edge and various guard-ring layouts are investigated, using two-dimensional finite-element T-CAD simulations. The simulation results have been compared to experimental data, and an overall good agreement is observed. It is demonstrated that the 50µm thick active-edge planar silicon sensors with floating guard-ring or without guard-ring can be operated fully efficiently up to the physical edge of the sensor. The simulation findings are used to identify suitable sensor designs for application in the high-precision vertex detector of the future CLIC linear e+e− collider.
Highlights
The physics aims at the future e+e− Compact Linear Collider CLIC pose challenging requirements on the vertex detector [1]
Hybrid planar silicon pixel detectors are under study
Besides the evaluation of the tracking performance, the main focus of the study has been on breakdown behaviour and charge collection efficiency in the edge region
Summary
The physics aims at the future e+e− Compact Linear Collider CLIC pose challenging requirements on the vertex detector [1]. Hybrid planar silicon pixel detectors are under study. The strict limit on the material budget of only 0.2 %X0 per detector layer limits the active silicon thickness to only 50 μm. Active-edge sensors with square pixels with 55 μm pitch have been designed, fabricated and characterised in laboratory and test-beam studies, using Timepix3 [2] readout chips as test vehicle. The detection efficiency of planar silicon pixel sensors with implanted and activated edges is strongly dependent on the electric field distribution in the edge region and on the interplay between pixel geometry, guard ring grounding scheme and edge implant. Optimisation of the edge design, in particular of the guard ring structure and the distance of the pixels to the trench around the sensor perimeter is of utmost importance. The study is complemented by finite-element T-CAD device simulations
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