Abstract
A new precision reclaim design process using micro-electroetching (MECE) as a removal process for indium-tin-oxide (In 2O 3SnO 2) nanostructure removal from the surface of polyethylene terephthalate (PET) digital paper is presented. The design features of the removal process for In 2O 3SnO 2 and the tool design of the sphere-form cathode are of major interest. A cathode with a large diameter and a small gap-width between the cathode and the PET-film are advantageous in achieving a fast feed rate. A small end radius of the sphere-form cathode, a pulsed direct current, a higher electrolyte concentration or temperature, or a higher cathode rotational speed can be used to achieve a higher etching rate for In 2O 3SnO 2. Through the ultra-precise etching of the nanostructure, the optoelectronic semiconductor industry can effectively reclaim defective products, thereby reducing production costs. A validity evaluation of the In 2O 3SnO 2 removal in MECE is constructed in the current study.
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