Abstract
In this paper the performance of InGaP/GaAs dual junction solar cell with InGaP/InGaP tunnel junction has been investigated using various single layer and double layer anti-reflection coatings like Al2O3, TiO2, ITO, Si3N4, ITO + Al2O3 and TiO2 + Al2O3. In order to determine the best anti-reflection coating, reflectivity and absorptivity graphs of each ARC is simulated and compared. The simulation of the multi-junction solar cell has been carried through computational numerical modelling TCAD tool ATLAS. The electric field developed across each layer along with photogeneration rates is determined and the simulation results are validated with published experimental data. The multi-junction solar cell model is implemented with optimised InGaP/GaAs dual junction cell having Al2O3 and TiO2 as double layer anti-reflection coating with effective InGaP/InGaP tunnel junction. A maximum conversion efficiency of 39.9724% is obtained under AM1.5G illumination.
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