Abstract
In0.53Ga0.47As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In0.53Ga0.47As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III–V on Si sample and the control that perform similarly below $8.6 \times 10^{-10}$ cm $^{2}$ . The existence of a critical device area suggests the potential to utilize III–V on Si for other deeply scaled tunnel devices.
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