Abstract

In this paper, the performance of maximum power point tracking (MPPT) using gallium nitride and silicon semiconductors were evaluated based on the difference in their transient characteristics. A solar power generation system increases its power generation efficiency by controlling the MPPT. Due to higher efficiency and smaller device size, gallium nitride and silicon carbide semiconductors have attracted more attention as next-generation power semiconductors than Si semiconductors. This study confirms that the power conversion efficiency of MPPT devices can be improved by using GaN semiconductors.

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