Abstract
The present research demonstrates the fabrication and comparative performance of GaN-based metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector on sapphire substrate. The MSM device has been fabricated with gold (Au) in an inter-digitized electrode (IDE) form with different geometry on molecular beam epitaxially (MBE) grown GaN. The current-voltage characteristics shows the minimum dark current of 68 nA and 40 nA and photocurrent of 24.5 $\mu$A and 9.02 $\mu$A for rectangular asymmetric (RA) and circular asymmetric (CA) geometry respectively. The room temperature characterization was performed under the illumination of 365 nm light at the applied voltage of 5V. The responsivity and efficiency enhanced by almost three times by circular geometry due to the reduced two-dimensional and three-dimensional electric field distribution effects in CA IDE.
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