Abstract
Comparative analysis between single gate organic FET and double gate is presented in terms of performance parameters such as ON-OFF current ratio, threshold voltage VTh, mobility µ, transconductance gm, output conductance g ds using TCAD device simulator. Effect of structural parameters and bias voltages on drain current is analyzed. Use of High-k dielectric and double gate configuration shows remarkable improvement in terms of higher drain current and performance parameters than single gate organic FET.
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