Performance estimation of Thulium doped fiber amplifiers in S-Band including Amplified Spontaneus Emission: Ion-Ion interaction analysis

Abstract

Optical amplification and communication can be potentially provided by Thulium-doped fiber amplifiers (TD-FAs) in S and near-C bands (1460 to 1565) nm. They can prove to be a worthy alternative to existing Erbium-doped fiber amplifiers (EDFAs) for which communication focuses at 1550 nm in dense wavelength division multiplexing (DWDM) systems. Optical conversion efficiency of TDFAs is dependent on parameters like Thulium ion ( $Tm^{3+}$ ) concentration, pump power, fiber length, dopant area, signal wavelength, and ion-ion interaction mechanisms (IM). This work primarily focus on theoretical modeling and simulation of IM effects involving Homogeneous up-conversion (HUC) and Pair induced quenching (PIQ) on TDFA gain characteristics. The beneficial aspects of IM effects were perceived in selection of optimum pump power (450 mW)and TDFA gain (20.32 dB). This Paper also includes the findings on optimum doping radius ( $1 \mu m$ ), TDFA length (100 $m$ ), and an added advantage of single wavelength (1050 nm) pump.