Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment

Abstract

This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-doped SnO channel layer. The effects of the fluorine plasma treatment were also investigated.By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays.