Abstract
InGaN light-emitting diodes (LEDs) with InGaN/GaN/InGaN triangular (IGIT) barriers were designed and investigated on a theoretical basis. The carrier concentration and radiative recombination rate distribution in multiple quantum wells, energy band diagrams, light output power–current–voltage performance curves, and internal quantum efficiency of the LEDs with IGIT barriers were studied. The simulations showed that the InGaN LEDs with IGIT barriers have higher output light power, lower turn-on voltage, and less efficiency droop than that of LEDs with conventional GaN and InGaN barriers. These improvements originate from the appropriately designed energy band diagram of the LEDs with IGIT barriers, which improves injection efficiency of holes and confinement of electrons.
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