Abstract
InGaN/GaN multiple quantum wells (MQWs) based light-emitting diode (LED) structures grown on silicon carbide (SiC) substrates with and without sputtered AlN nucleation layer (NL) were investigated. High resolution X-ray diffraction rocking curve results indicated an improvement of GaN crystalline quality by using sputtered AlN NL. The surface morphology improvement of the LED structures was characterized by atomic force microscope and the root-mean-square roughness decreased from 14.1 nm to 2.1 nm by using sputtered AlN NL. The obvious enhancement of luminescence property was identified by photoluminescence and cathode luminescence spectra. These results pave the way for potential applications in SiC based microwave power devices and light emitting devices.
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