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Abstract
Performance enhancement of a very inexpensive millimeter-wave (MMW)/terahertz (THz) sensor for MMW/THz imaging systems is experimentally demonstrated in this study. The MMW sensor is composed of a glow discharge detector (GDD) and a light-to-frequency (LTF) converter combination. The experimental results given in this study show an improvement in the performance parameters of the detector element, such as the minimum detectable signal, as well as the signal to noise ratio (SNR) and the noise equivalent power (NEP), when a NIR long-pass filter was inserted between the GDD and the LTF combination. A detailed derivation of the NEP of this unique sensor is presented in this work. Based on this derivation and the experimental measurements, the NEP value was calculated.
Highlights
IntroductionOne of the main interests of MMW technology is the development of low-cost, fast, highly sensitive, compact, room-temperature sensors
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The measurement conditions used in this experiment were: DC bias current of 5 mA, and a distance between the LTF and glow discharge detector (GDD) (∆L) of 10 mm
Summary
One of the main interests of MMW technology is the development of low-cost, fast, highly sensitive, compact, room-temperature sensors. This will allow applications in medicine, communications, homeland security, material science, and space technology [1,2]. Semiconductor MMW detectors have high sensitivity and can operate at room temperature [1]. They are extremely sensitive to electrostatic discharge (ESD), very expensive and they will be affected and get damaged during instances of incidence by high MMW power. The zero-biased detector (ZBD) WR10ZBD of Virginia Diodes Inc. has a damage input power of 1 mW [5]
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