Abstract
We report on the fabrication and characteristics of AlGaAs/InGaAs related heterojunction field-effect transistors by MBE. Two methods were used to shift the maximum of electrons from close to the gate-channel heterointerface. Both result in grade-like channels. Due to the superior electron transport properties in InGaAs wells, the studied devices exhibit better characteristics compared with conventional AlGaAs/GaAs and AlGaAs/InGaAs metal-insulator-semiconductor FETs. High breakdown voltages, large turn on voltages, low output conductance, and improved device linearity are obtainable.
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