Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; passivation

Dong Xu,K Nichols,J Diaz,G Duh,Kanin Chu,P Seekell,Wenhua Zhu,R Roy,Xiaoping Yang,P C Chao,Peide Ye,Min Xu,L Mt Pleasant,D Pritchard,R Isaak

doi:10.1109/lec.2012.6411000

Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al<inf>2</inf>O<inf>3</inf> passivation

Dong Xu, K Nichols + Show 13 more

https://doi.org/10.1109/lec.2012.6411000

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Publication Date: Aug 1, 2012

Citations: 1

Affiliation: BAE Systems (United States), Purdue University West Lafayette

#Atomic Layer Deposition Aluminum Oxide #Atomic Layer Deposition + Show 8 more

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Abstract

We report a new passivation technology based on atomic layer deposition (ALD) aluminum oxide for the GaN high electron-mobility transistor (HEMT). This new process markedly enhances GaN device's electrical performance including DC, and in particular the pulsed-IV characteristics. The achieved improvement is attributed to the outstanding interface between III-N and the ALD aluminum oxide resulting from the unique process of the ALD growth, featuring a wet-chemical-based wafer preparation as well as the self-cleaning at the very beginning of the whole growth process.

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