Performance Enhancement of Field-Effect Transistors Based on In₂O₃ Nanofiber Networks by Plasma Treatment

Abstract

In this report, In2O3 nanofiber networks (NFNs) were prepared by electrospinning and the field-effect transistors (FETs) based on In2O3 NFNs were fabricated. The effects of plasma treatment on the electrical performance of the FETs based on In2O3 NFNs were investigated. It is found that the oxygen vacancy in In2O3 NFNs can be tuned by the plasma treatment and the electrical performance of the FETs can be tuned accordingly. In this work, X-ray photoelectron spectroscopy was employed to investigate the chemical stoichiometry in In2O3 nanofibers with respect to plasma treatment conditions. The electrical performances of the FETs based on In2O3 NFNs treated by various plasma treatment conditions were systematically studied. It is found that, compared to those without O2 plasma treatment, the FET based on In2O3 NFNs treated by O2 plasma at 120 W for 5 min exhibits high electrical performance, including the variation of threshold voltage from −22.34 to 7.81 V and current on/off ratio from $\sim 10^{{3}}$ to $\sim 10^{{7}}$ and a $\mu _{\text {FE}}$ of 1.51 cm2 /Vs. This result demonstrates that moderate plasma treatment can be adopted to improve the electrical performance of the FETs based on metal oxide NFNs.