Abstract
We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.
Highlights
The technologies for manufacturing modern electronic devices that exhibit high stretchability, flexibility, and transparency are attracting much attention owing to the increased demand for such devices in recent years [1]
We investigated the effects of different high-k gate dielectrics, Microwave annealing (MWA) calcination, and a postcalcination oxygen plasma treatment on the properties of electrospun indium gallium zinc oxide (IGZO) NF field-effect transistors (FETs)
We found that the higher the dielectric constant of the gate dielectric used, the better the performance of the IGZO NF FETs, with the device based on Ta2O5 exhibiting the best performance
Summary
The technologies for manufacturing modern electronic devices that exhibit high stretchability, flexibility, and transparency are attracting much attention owing to the increased demand for such devices in recent years [1]. In this regard, high-performance multifunctional devices based on nanomaterials such as nanofibers (NFs), nanowires, nanoparticles, and nanoribbons are being explored [2,3,4,5,6,7]. There have been few reports of the effects of microwave processing on the calcination of NFs. plasma surface treatments have been employed for improving specific properties of metal oxide semiconductors. Oxygen plasma treatments can improve device performance by removing the organic moieties and defects present in the channel layer when it is formed by a solution-based process, such as electrospinning [23]
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