Abstract
This paper describes a performance analysis of solar cell based on Cu (In1-xGax)Se2 (CIGS) material as an absorber layer together with two dimensional (2d)-MoS2 as hole transport layer (HTL) inserted between absorber layer and back contact using 1D-SCAPS program tool. In this work, numerical modeling tool has used to investigate the effect of thickness, doping concentration and defect variation on the performance of solar cell. Based on optimization of the device parameters, highest power conversion efficiency (PCE) of 26.81% (Voc =0.783 V, Jsc = 40.30 mA/cm2 and FF = 84.97%), has been obtained for ZnO/CdS/CIGS/MoS2 photovoltaic cell having 1.18eV energy bandgap (Eg) of CIGS layer. Performance of proposed CIGS solar cell with 2d-MoS2 HTL is better than the conventional CIGS solar cell and provide new path for recent advanced research for fabrication of solar cell on this technology. Further, solar cell's performance has been analyzed for various series-shunt resistances, work function of metal contacts and temperature for better analysis of the cell.
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