Abstract
The characteristics of AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with the last quantum well inserted into electron blocking layer(EBL) have been investigated numerically in this study. The simulation results indicate that the light-emitting EBL(LEEBL) can suppress electron leakage better than traditional EBL due to the superior electron confinement and hole injection of the quantum well in LEEBL. Besides, the LEEBL with a quantum well closer to active region can further improve the performance of the UV LED owning to better electron blocking and hole injection for the quantum wells in active region. As a result, the output power of the UV LED with the quantum well located in the middle of LEEBL increases by 17.83% and the utilization of LEEBL with a quantum well located closer to the active region can further enhance the output power by 54.11% compared with traditional UV LED.
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