Abstract
Direct laser interference patterning (DLIP) is used to fabricate large-area, periodic surface patterns on Sb2S3 substrates to enhance the performance of solar cells. Comparing the power conversion efficiencies (PCE) to the reference cell on flat Sb2S3 film, a relative increase of 73% is observed for the DLIP patterned device. Our systematic study reveals that DLIP promotes beneficial crystallization of the Sb2S3 film. Light scattering is increased and recombination is depressed in the textured Sb2S3 film. It is expected that our study can provide a roadmap for the further development of photovoltaic devices (PVs) based on chalcogenide semiconductors.
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