Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

Abstract

Au counter electrode is generally used with polysulfide electrolyte for quantum dot-sensitized solar cells (QDSCs) due to degradation of QD by iodine electrolyte and strong interaction between Pt counter electrode and S2− ions in polysulfide electrolyte. In this work, the effects of the thickness and morphology of Au counter electrode on the performance of Si QDSC were investigated. Au film thickness was linearly controlled from 5 to 500 nm by deposition time. Cyclic voltammetry and impedance analysis clarified the catalytic activity of counter electrode, surface resistance of transparent conductive oxide (TCO), and the charge transportation at the counter electrode. The increase of Au film thickness reduced the surface resistance of TCO with increased conductivity. No significant difference in the redox reaction from electrolyte to Si QDs was observed for Au film thickness from 20 to 500 nm. Catalytic reaction of counter electrode was activated with the increase of Au film thickness up to 200 nm. The impedance of charge transportation at the counter electrode was also decreased with Au deposition. Their surface resistance, catalytic activity and internal resistance were reflected in overall performance. Consequently, Si QDSC with 200-nm-thick Au counter electrode had the best performance.