Performance degradation of Si device with the change of carrier lifetime under laser irradiation

Abstract

In the paper, the performance of Si devices with change of carrier lifetime was reported with finite volume method. In the two-dimensional axisymmetric semiconductor model, based on Si p-n junction structure, direct recombination, auger recombination and the SRH (Shockley-Ready-Hall) recombination were taken into consideration. Both cathode and anode was made via ohmic contact. Two kinds of device models with p+-n or n+-p type were built accordingly. 1064 nm laser was used as signal beam in the model. Numerical simulation had been studied under different bias voltage and carrier lifetime. Compared with the results, it was found that the device performance was affected by the minority carrier lifetime obviously. It also inferred that performance of Si devices was degenerated by laser indirectly.