Abstract
In this paper, the performance of dual material double-gate (DMDG) III-V-on-insulator field effect transistor (XOI FET) is studied using an analytical compact model developed by solving 2D Poisson equation. Based on the model, the surface potential, electric field, threshold voltage, DIBL, and drain current profile are estimated for DMDG structure and compared with that of single material double-gate (SMDG) structure. The steeper change in surface potential profile at the gate materials interface demonstrates better suppression of short channel effects in case of DMDG structure than SMDG structure. The reduction of peak electric field as a function of gate materials work function difference indicates that the impact of hot electron effects can be controlled for DMDG structure with respect to SMDG structure. The results of threshold voltage, drain induced barrier lowering (DIBL), and drain current suggest that the DMDG device structure outperforms compared to conventional SMDG device structure.
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