Abstract
Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and switching efficiency of GaN-based FET in an active-clamp, DC-to-DC flyback converter for step-down application (24 V to 7 V) and compares it with silicon (Si)- based devices in the same circuit topology. The operation is analyzed under various input conditions and output loads such as R, RC, RL, and RLC. The proposed topology can achieve a maximum power-conversion efficiency of 99.6% and can operate at higher frequency values above 1 MHz. The presented GaN-based flyback model can replace conventional Si-based switches in power applications which require high power-efficiency and switching speed in a compact device.
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