Performance Comparison of Monolithic GaN and Silicon Converters

Abstract

AbstractThis chapter presents a comprehensive performance comparison between power converter ICs in GaN and silicon. Beginning with a comparison table of state-of-the-art monolithic high-voltage converter ICs the chapter investigates several different aspects. The GaN IC of this work shows the smallest die size with integrated HV power transistor and is even smaller than most silicon implementations of the controller only. A study explores the trade-off between efficiency and power density. It includes parameters such as switching frequency, inductor values, and ratings. With 95.6% the presented power converter ICs in GaN shows the highest peak efficiency of converters with a fully integrated power stage. Thanks to the fast-switching GaN integration the low component count and small passive component size results in a power density up to \({44 {\mathrm {W/}}{\textrm{in}}^3}\), which is the highest reported in comparison to the state-of-the-art in this voltage and power class. The results can be transferred to other GaN converters and applications spaces.KeywordsGaN vs. SiliconGaN integrationBuck converterLow-side buckLED driverEfficiencyLoss mechanismLoss comparisonSwitching lossesConduction lossesTurn-on energyLoss distributionPower inductorSwitching frequencyPower densityControl accuracyDesign trade-offBill of materials