Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Hsin-Ying Lee,Ching-Ting Lee,Jen-Inn Chyi,Ying-Hao Ju

doi:10.3390/ma15010042

Abstract

In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

Highlights

In recent decades, silicon (Si)-based electronic devices have become dominant power devices used in various systems
Planar channel structures and multiple-mesa-fin-channel array structures have been widely used for the fabrication of MOSHEMTs
To compare the performance of planar channel and multiple-mesa-fin-channel array used in double-channel

Summary

Introduction

Silicon (Si)-based electronic devices have become dominant power devices used in various systems. GaN-based single-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs), active development of high-performance compelling devices is still needed. To simultaneously obtain both the enhanced μn and nch , multiple-channel structures were explored [4,5,6,7]. Superior performances of higher current drive, low resistance, low-frequency noise, and improved linearity were demonstrated in multiple-channel MOSHEMTs [8,9,10]. Double-channel epitaxial layers of lattice-matched Al0.83 In0.17 N/GaN/Al0.18 Ga0.82 N/GaN were grown on Si substrates using a metalorganic chemical deposition To compare the performances of the planar channel structure with the multiple-mesa-fin-channel array of double-channel MOSHEMTs, lattice-matched double-channel Al0.83 In0.17 N/GaN/Al0.18 Ga0.82 N/GaN MOSHEMTs with planar channel were fabricated and studied

Epitaxial Growth and Results

Results and Discussion

Conclusions