Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs

Abstract

In this paper, with the help of extensive TCAD simulations, a novel channel and source/drain (S/D) impurity profile engineering has been proposed for pseudo SOI MOSFET structures in order to reduce their junction capacitances. It has been shown that this approach leads to improved performance and lower power dissipation for sub 100 nm CMOS technologies. These pseudo SOI structures studied in this work are referred to as the Source Drain On Depletion Layer (SDODEL) MOSFETs in the earlier studies. We have investigated DC characteristics and analog performance parameters in Single Halo SDODEL MOSFET, Double Halo SDODEL MOSFET and compared their performance with Double Halo MOSFETs (which will henceforth be referred to as Control MOSFETs) with extensive process and device simulations. Our results shows that, in Single Halo SDODEL MOSFET there is significant improvement in the intrinsic device performance for analog applications (such as device gain, g m/ I D etc.) for the sub 100 nm technologies.