Abstract
Characteristics of two AlGaN/GaN Heterojunction Field Effect Transistor (HFET) structures are studied in this paper. The structures are simulated with Sapphire and 4H-SiC substrates respectively. Output characteristics curve (Id-Ids), threshold voltage (Ft), transconductance (obtained from Id-Igs curve) and subthreshold slope (SS) of the two HFETs are observed. Device with Sapphire substrate exhibits higher drain current (almost 1.4 times the current obtained from the device with 4H-SiC). On the other hand, device with 4H-SiC substrate is better in terms of threshold voltage, transconductance and subthreshold slope. All the simulations are performed using Silvaco ATLAS™.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
