Abstract
This research examines the nonlinearities in three phase inverters for a SiC-based system and compares its performance to that of a IGBT system. An analytical model of inverter voltage distortion is developed. The model accounts for not only dead time $(t_{d})$, switching delay time, switching frequency $(f_{s})$ and voltage drops of power devices, but also for output parasitic capacitance $(C_{out})$. Experimental tests validate such a model, which offers a more accurate estimate of the inverter’s output phase voltage distortion. The characteristics of power devices are taken from the datasheet and C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> is determinate by experiment. Three phase inverters with varied switching frequencies, fundamental frequencies, and dead-time values are used in simulations and experiment to determine the influence of nonlinearity on phase voltage deviation and current distortion. As the dead time can be reduced due to the SiC device’s faster switching time, it is shown that the phase voltage deviation and phase current distortion is less than that of the ones obtained using the IGBT-based inverter for high frequency applications.
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