Abstract
The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given.
Highlights
IntroductionSilicon nitride (SiNx), an associated CMOS photonics enabling material, provides a very promising and complementary photonic platform for the development of low-cost CMOS compatible waveguides and related photonic components [5]
To date, one of the challenges faced by silicon photonics is the integration of non-volatile reconfigurable components such as switches, filters, memories, though recently significant progress has been made, in particular by combining chalcogenide phase-change materials with photonic devices.Silicon nitride (SiNx), an associated CMOS photonics enabling material, provides a very promising and complementary photonic platform for the development of low-cost CMOS compatible waveguides and related photonic components [5]
In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively
Summary
Silicon nitride (SiNx), an associated CMOS photonics enabling material, provides a very promising and complementary photonic platform for the development of low-cost CMOS compatible waveguides and related photonic components [5]. This is due to the flexibility of the material in terms of fabrication (low temperature), tuneability of the refractive index contrast, transparency, and low temperature sensitivity [6]. Chalcogenide phase-change materials have been a mature technology for decades in optical storage and are seen as a promising CMOS compatible route to provide the much needed nonvolatile reconfigurability in integrated photonic components [11].
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