Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers

Abstract

The effect of the indium (In) composition of InxGa1−xN (GaN) waveguide layers on the performance of deep violet In0.082Ga0.918N/GaN double quantum well (DQW) laser diodes (LDs) emitting at 390nm output emission wavelength has been numerically investigated. Simulation results indicated that by increasing In composition of the InxGa1−xN waveguide layers, the threshold current decreases, the slope efficiency, and differential quantum efficiency (DQE) increase, whereas the output power decreases. The increase in the In composition of the InGaN waveguide layers increases the refractive index and consequently increases the optical confinement factor (OCF) which result in the increase in the slope efficiency and DQE and the decrease in the threshold current. The decreasing movement of electron and hole carriers from the bulk waveguide layers to the active regions also causes to decrease the output power. A new LD structure with InGaN/GaN superlattice (SL) waveguide layers has been proposed to exploit the increased OCF of InGaN waveguide structures, and the enhanced electron and hole mobilities and the tunneling effect of the periodic structure of the SL structures. The results also showed that the use of InGaN/GaN SL waveguide structures effectively improves the output power, slope efficiency and DQE and decreases the threshold current of the LD compared with (In)GaN bulk waveguide structure.