Performance characterisation of a microwave transistor

Abstract

The maximum transducer power gain GTmax of a bilateral microwave transistor-is analytically expressed in terms of only noise figure F, input-VSWR Vi and the open-circuit parameters mod z mod . The analysis is based on a geometrical approach using the constant noise, input VSWR and gain circles in the source and input impedance planes keeping the solution within the physical bounds. The corresponding source Zs and load ZL terminations are also obtained analytically. Cross-relations among the possible (F, Vi, GTmax) triplets have been utilised in obtaining the performance contours of a microwave transistor at an operating frequency and bias condition. This type of representation of performance promises to be used in data sheets of microwave transistors by manufacturers in forthcoming years.