Abstract
In this paper, a novel 4H–SiC power MOSFET structure based on junctionless (JL) concept is proposed. The proposed device is investigated using accurate numerical models based on Atlas TCAD device simulator. It is revealed that the use of cost-effective junctionless structure can allow overcoming problems related to power MOSFET channel resistance, which results in a high figure of merit (FoM) (BV2/Ron,sp = 2676/5.78 = 1236) without the need of lowering the drift region resistance. In addition, the analyzed device based on JL aspect exhibits a good reliability at short-circuit conditions. Moreover, the device breakdown voltage, specific on resistance and drain current are studied in order to reveal and provide some insights regarding the impact of design dimensions on these electrical performances. Besides, the output and transfer characteristics are compared to those of the conventional counterpart, as well as the critical electric field at breakdown. It is found that the proposed structure pave the way for achieving enhanced derived current capability, while maintaining excellent breakdown characteristics. These significant results makes the proposed JL structure a promising candidate toward the design of high-performance and cost-effective 4H–SiC MOSFETs, which are highly suitable for power electronics applications.
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