Abstract

We propose an approach to model the electrical double layer and electrolyte/insulator interface interactions in TCAD tools. With this model, we can simulate ion sensitive field effect transistors (ISFETs) and other similar devices depend on electrical double layer interactions. Also, we examine our model with Dual-gated ion sensitive field effect transistors (DG ISFET) which is a promising high-resolution device that beats the Nernst limit. To verify the proposed model, DG ISFET with various sensing films have been investigated. Results show that DG ISFETs with high dielectric constant demonstrate high sensitivity against pH changes, leading to accurate highly sensitive sensors.

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