Performance and reliability of high-power multimode lasers between 0.8 and 1 μm

Abstract

ABSTRACT High power multi-mode semiconductor lasers operating between 1 Watt and 2 Watts are widely used for pumpingsolid-state lasers, active fibers and direct materials processing. In this paper, we present the high power and high temperatureperformance characteristics of 100 tm aperture broad area lasers. In addition, we will present lifetest data that supports meanlifetimes in excess of 500,000 hours for this class of lasers. 1. INTRODUCTION High power (> 1 Watt) semiconductor lasers emitting from 100 xm aperture are widely used for printing and solid-state laser pumping. The operating wavelength of these lasers is divided into two major category, based on the active layermaterial: 1) A1GaAs lasers that emitting between 790 nm and 860 nm, 2) InGaAs lasers that emitting between 900 nm and990 nm. Despite impressive reports on laser performance from InGaAsP material, there have yet been few detailed reports oflaser reliability of that material system. In this paper, we present a summary of long term high power and high temperaturestressed life tests for both A1GaAs and InGaAs material systems.The internal structure of the laser consists of an A1GaAs or InGaAs quantum well active region with AlGaAs guidingand confinement layers. The laser facet are given standard high-reflectance and low-reflectance coatings on the rear and frontfacet, respectively. In this report, the A1GaAs 100 tm broad area lasers have cavity length of 750