Abstract
We present a systematic characterization of wafer-level reliability dedicated test structures in Back-Side-Illuminated CMOS Image Sensors. Noise and electrical measurements performed at different steps of the fabrication process flow, definitely demonstrate that the wafer flipping/bonding/thinning and VIA opening proper of the Back-Side-Illuminated configuration cause the creation of oxide donor-like border traps. Respect to conventional Front-Side-Illuminated CMOS Image Sensors, the presence of these traps causes degradation of the transistors electrical performance, altering the oxide electric field and shifting the flat-band voltage, and strongly degrades also reliability. Results from Time-Dependent Dielectric Breakdown and Negative Bias Temperature Instability measurements outline the impact of those border traps on the lifetime prediction.
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