Abstract
Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point ( $V_{\mathrm{ OP}}$ ) has been proposed, which provides a good trade-off between the Ion/Ioff ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.
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