Abstract
We fabricated a high-performance InAs/GaSb type-II superlattice infrared detector. The tolerance of various sizes of detector irradiated with 1-MeV electrons was characterized. X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) measurements demonstrated the high quality of the materials. The response spectrum had a 50% cutoff wavelength of 8.85 μm. Irradiation with 1-MeV electrons caused a significant increase in the dark current density from 2.54 × 10−3 to 2.58 × 10−1 A/cm2 at Vb = –0.03 V. The 1-MeV electron irradiation mainly caused displacements in the device, which had a significant impact on the generation-recombination dark current and surface leakage current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
