Performance and electrical characteristics of hybrid carbon nanotube field effect transistors

Abstract

The performance and electrical characteristics of hybrid carbon nanotube field effect transistor (CNTFET) are studied. Hybrid CNTFET consists of heavily doped carbon nanotube (CNT) as a one contact connected to intrinsic CNT as a channel. The opposite side of the channel is connected to a metal as the other contact. If the source is the metal and the drain is the heavily doped, this type is called metal–semiconductor hybrid CNT or MSH-CNTFET. While when the source is the heavily doped and the drain is the metal, this is called semiconductor–metal hybrid CNT or SMH-CNTFET. The electrical characteristics of the device has been studied using a two-dimensional (2D) quantum mechanical simulator by solving 2D Poisson's equation self consistently with Non-equilibrium Green function (NEGF). The proposed devices are found to overcome the ambipolar conduction of Schottky barrier CNTFETs and improve frequency performance of metal–oxide–semiconductor CNTFETs.