Abstract
This paper reports the state of the art performance for blue–violet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth have resulted in a threshold current density of 3.6 kA/cm2, which translates into improved cw lifetime of up to 42 hours. Reducing the internal loss resulted in a high cw slope efficiency of 1.08 W/A and a maximum cw output power of 145 mW. To obtain a better understanding of the LD failure mechanism, degraded LDs were analysed using surface mapping techniques such as photoluminescence and electroluminescence on a micrometric scale, which allows the identification of failure regions. These measurements revealed increased nonradiative recombination in localized regions and increased current injection non-uniformities as possible mechanisms for LD performance degradation after aging. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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