Abstract
In this work, we analyze the effect of the thickness of Tungsten Disulfide (WS 2 ) transition metal dichalcogenide (TMD) material layer as an absorber layer for solar cell. The simulation of the model has been demonstrated by using SCAPS-1D at different thickness of the WS 2 absorber layer. It is observed that increment in the power conversion efficiency (PCE) of n-ZnO/n-CdS/p-WS 2 based solar cell is from 23.73% to 29.74% as the thickness of absorber layer varies from 500 nm to 3000 nm respectively. The analyzed results deliver remarkable guideline for fabrication of efficient WS 2 based solar cell.
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