Abstract
This research paper analyzes the performance of vertical channel organic thin film transistor (VOTFT) using state of art industry standard Atlas 2-D numerical device simulator for different channel materials. The basic electrical characteristics of VOTFT are analyzed and parameters extraction is carried out. Lateral channel OTFT offers low-speed and requires high operational voltage due to longer channel length. Thus for high speed operation, VOTFTs are analyzed. These devices have shorter channel length that corresponds to thickness of organic semiconductor (OSC) layer. Organic static induction transistor (OSIT) type structure is used for VOTFT analysis in this research paper. OSITs employ schottky barrier contact between OSC and gate while ohmic contact is formed between OSC and source/drain electrodes. Majority carriers flow from source to drain is controlled by varying gate voltage (V G ) applied to schottky gate electrode. Comparative analysis of three OSIT devices for different OSC materials is done by simulation. Device 1 has copper phthalocyanine (CuPc) as OSC material. Device 2 has pentacene as OSC material while Device 3 has pentacene along with ultrathin CuPc layer at source side to increase hole injection. The results obtained demonstrate that Device 3 shows 95.95% and 60.93% higher I on / off ratio as compared to Device 1 and 2, respectively.
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