Abstract
The work presented in this paper is a variable threshold voltage (ΔVth) model of junction less fin gate tunnel FET (JL FinTFET) in which there is a shift in threshold voltage. As a result, to improve drive current and subthreshold slope among other devices. At the same time, gradually decrease the random dopant fluctuations (RDF) effects on Vth, ambipolar leakage current by using this design. The threshold voltage in the junction less fin gate TFET may be modified using 2D numerical simulations by supplying a voltage to the variable gate. The effects of the threshold voltage change on the device's overall performance investigate. A GaSb junction less fin gate TFET and AlGaSb junction less fin gate TFETs with variable threshold voltage characteristics compare. The ON state current is 1.5x10-3 A/m, the SS is 17.1 mV/decade, and the Iamb is 3.314x10-17 A/m.
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