Performance Analysis of Transition Metal Dichalcogenide Based Multichannel Cylindrical Shaped Gate All Around (GAA) MOSFET

Abstract

In this work, we proposed a unique structured multichannel cylindrical shaped gate all around (GAA) MOSFET and carried out electrical performance and short channel effect (SCE) analysis employing the three-dimensional numerical analysis of the device on the basis of its basic performance criteria such as channel length, channel material, and oxide thickness. Transition Metal Dichalcogenides (TMD) have gained immense interest as the channel material of Field Effect Transistors (FETs) because of their convenient bandgap, dangling bond free interfaces and atomic scale thickness which are attractive for switching and logic devices. We performed an in-depth analysis of our designed multichannel cylindrical shaped GAA MOSFET using TMD (MoS2), GaN, silicon as the channel materials with 7 nm channel length. Comparative analysis of these devices shows approximately 1e14, 1e11, $1\mathrm{e} 5 \mathrm{I}_{\mathrm{on}}/ \mathrm{I}_{\mathrm{off}}$ ratio and 14 mV/decade, 31 mV/decade, 33 mV/decade Subthreshold Swing for MoS2, GaN and silicon respectively.