Performance Analysis of TFET and VDSTFET for Low Power Application using the Work Function Engineering

Abstract

We report a design of TFET which is quite different from conventional TFET. The structure of VTFET is similar to MOSFET but the conducting mechanism is completely different. Vertical TFET is designed perpendicular to the horizontal plane. The switching and carrier transportation mechanism of VTFET is based on the mechanism of the band to band tunneling through a potential barrier and vertical TFET is based on tunneling perpendicular to the device rather than a mechanism like thermionic emission unlike in MOSFET. We have designed a model for the two-dimension structure of V-TFET which consists of the dual-source and single drain. The channel among the drain and gate region is extraordinarily thin. We have plotted the transfer characteristics of V-TFET according to device parameters using TCAD. The comparison of VTFET with DSVTFET is done by using Silvaco TCAD and the effect of source doping, and work function on transfer characteristics of the device is examined by using silvaco TCAD simulations. The proposed device produces a low-off current.