Abstract
In this paper present the performance analysis of two possible realizations of a CNT-based nano-interconnect, namely one obtained by using a bundle of SWCNT and another one employing an MWCNT and their applicability as interconnects in nanoscale integrated circuits in subthreshold regime. The time delay, power dissipation and power delay product of SWCNT bundle and MWCNT interconnect configurations are derived and compared to those of the copper (Cu) wire counterparts for the intermediate and global interconnects for three different technologies (32-, 22- and 16nm). It is observed that, compared with the Cu, and SWCNT bundle the MWCNT interconnect can lead to a reduction of all above three parameters and it becomes more significant with increasing interconnect length. Because of considerable improvement in Power Delay Product MWCNT interconnect will be more suitable for the next generation of interconnect technology as compared with the SWCNT bundle and Cu counterpart in subthreshold regime also.
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More From: International Journal of Research in Engineering and Technology
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