Abstract
A novel 2-D numerical model incorporating nonstationary electron dynamics is used to investigate the complex transport phenomena governing the operation of sub-micron gate GaAs MESFET's. A detailed theoretical analysis of different phenomena observed in subhalf micron devices is given. These include velocity overshoot, stationary and travelling domain formation, soft pinch off, excess drain current etc. The small signal parameters g m , g d and C gs and their dependence on bias condition are evaluated. The effects of physical quantities such as mobility and interface barrier on carrier injection and transport and consequently on device performance are presented.
Published Version
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