Performance Analysis of SiSn Based High Efficiency p-n Junction Solar Cell

Abstract

We presented here the theoretical study on the performance parameters of Si<inf>0.88</inf>Sn<inf>0.12</inf> p-n junction solar cell. A detailed description of the dependences of short circuit current density <tex>$\boldsymbol{(Jsc),}$</tex> open circuit voltage <tex>$\boldsymbol{(V oc),}$</tex> fill factor <tex>$\boldsymbol{(FF)}$</tex> and conversion efficiency <tex>$\boldsymbol{(\eta)}$</tex> on the diffusion lengths of both electron <tex>$(L_{n})$</tex> and hole <tex>$(L_{p})$</tex> has been illustrated. We also demonstrated in depth the effect of generation rate of charge carrier as well as temperature on the <tex>$\boldsymbol{J-V}$</tex> and <tex>$\boldsymbol{P-V}$</tex> characteristics of SiSn solar cell at the room temperature. The estimated results revealed that the p-n junction solar cell using Si<inf>0.88</inf>Sn<inf>0.12</inf>alloy gives <tex>$\mathbf{{J}_{\text{sc}}\sim 39.6\text{mA}/\text{cm},^{2}\mathrm{V}_{\mathrm{o}\mathrm{c}}\sim 0.89\mathrm{V}, \text{FF}\sim 0.828}$</tex> and the maximum efficiency <tex>$\mathbf{\eta\sim 29.19\%}$</tex>. Short circuit current density and open circuit voltage are found to be strongly dependent on the generation rate and the diffusion length of electrons and holes for <tex>$\mathbf{Si_{1-x}Sn_{x}.}$</tex> In particular, the sustainability of SiSn alloy as an active photovoltaic material is assessed here by analyzing different performance parameters.